ACE16604B datasheet(1/2 Pages) ACE

Part #	ACE16604B

Description	N-Channel Enhancement Mode Power MOSFET

PDF	2 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE16604B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

General Description

⚫

Power Supply

⚫

LED Backlighting

Features

⚫

VDS=60V

⚫

ID=51A

⚫

RDS(ON)@VGS=10V, TYP 6.7 mΩ

⚫

RDS(ON)@VGS=4.5V, TYP 12 mΩ

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Units

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous) *AC

TC=25℃

ID

51

A

TC=100℃

32

Drain Current (Pulsed) *B

IDM

204

A

Power Dissipation

TC=25℃

PD

41.7

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

Note:

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

C. The current rating is

based on the t≤ 10s junction to ambient thermal resistance rating

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Case (Drain)

Steady State

RthJC

3

°C/W

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ACE16604B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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