ACE18812B datasheet(1/7 Pages) ACE

Part #	ACE18812B

Description	Common Drain N-Channel Enhancement Mode Power MOSFET with ESD Protection

PDF	7 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE18812B

Common Drain N-Channel Enhancement Mode Power MOSFET with ESD Protection

VER 1.1

1

Description



Portable Equipment



Battery Powered System



DC/DC Converter



Load Switch



ESD Protection

Features



VDS (V) = 20V ,ID = 7A



RDS(ON)@VGS = 4.5V, TYP 13.5

mΩ



RDS(ON)@VGS = 4.0V, TYP 14.0

mΩ



RDS(ON)@VGS = 3.1V, TYP15.2

mΩ



RDS(ON)@VGS = 2.5V, TYP17.5m

Ω

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

*AC

TA=25

OC

ID

7

A

TA=70

OC

5.5

Drain Current (Pulse)

*B

IDM

30

Power Dissipation

TA=25

OC

PD

1.5

W

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

OC

A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B. Repetitive rating, pulse width limited by junction temperature.

C.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

t ≤ 10 s

R

thJA

100

°C/W

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ACE18812B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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