AV9012 datasheet(1/2 Pages) AVICTEK

Part #	AV9012

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	AVICTEK [Avic Technology]

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@vic

AV9012

1

Website: http://www.avictek.com

TO-92 Plastic-Encapsulate Transistors

AV9012 TRANSISTOR（ PNP ）

FEATURES

Power dissipation

PCM : 0.625 W（Tamb=25℃）

Collector current

ICM : -0.5 A

Collector-base voltage

V(BR)CBO : -40 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified

）

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -100μA， IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= -0. 1 mA， IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA， IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40 V IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=- 20 V IB=0

-0.2

μA

Emitter cut-off current

IEBO

VEB= - 5 V， IC=0

-0.1

μA

HFE（1）

VCE= -1 V, IC= -50 mA

64

300

DC current gain

HFE（2）

VCE= -1V, IC =-500 mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-500 mA, IB=-50 mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA,IB=-50 mA

-1.2

V

Base-emitter voltage

VEB

IE=-100mA

-1.4

V

Transition frequency

fT

VCE=- 6 V, IC= -20 mA

f =30MHz

150

MHz

CLASSIFICATION OF HFE(1)

Rank

D

E

F

G

H

I

Range

64-91

78-112

96-135

112-166

144-202

190-300

1

2 3

TO—92

1. EMITTER

2. BASE

3.COLLECTOR

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