VB20100C datasheet(1/5 Pages) VISHAY

Part #	VB20100C

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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VB20100C

www.vishay.com

Vishay General Semiconductor

Revision: 19-Jun-2018

1

Document Number: 87982

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.50 V at IF = 5 A

DESIGN SUPPORT TOOLS

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

MECHANICAL DATA

Case: D2PAK (TO-263AB)



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 2 whisker test

Polarity: as marked



PRIMARY CHARACTERISTICS

IF(AV)

2 x 10 A

VRRM

100 V

IFSM

150 A

VF at IF = 10 A

0.58 V

TJ max.

150 °C

Package

D2PAK (TO-263AB)

Circuit configuration

Common cathode

1

2

K

TMBS

®

D2PAK (TO-263AB)

PIN 1

PIN 2

K

HEATSINK

VB20100C

click logo to get started

Available

Models

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB20100C

UNIT

Maximum repetitive peak reverse voltage

VRRM

100

V

Maximum average forward rectified current (fig. 1)

per device

IF(AV)

20

A

per diode

10

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

IFSM

150

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Operating junction and storage temperature range

TJ, TSTG

-40 to +150

°C

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