2016 datasheet(2/5 Pages) TUOFENG

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Symbol

Min

Typ

Max

Units

BVDSS

IGSS

100

VGS(th)

0.4

0.6

ID(ON)

Ω

gFS

VSD

0.76

Ciss

436

Coss

Crss

Ω

6.2

Qgs

1.6

Qgd

0.5

tD(on)

5.5

6.3

tD(off)

12.7

trr

12.3

Qrr

3.5

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VGS=4.5V, ID=4.2A

Reverse Transfer Capacitance

IF=4A, dI/dt=100A/µs

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=16V, VGS=0V

VDS=0V, VGS=±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Ω

VGS=2.5V, ID=3.7A

IS=1A,VGS=0V

VDS=5V, ID=4.2A

Turn-On Rise Time

Turn-Off DelayTime

VGS=5V, VDS=10V, RL=2.7Ω,

RGEN=6Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge

VGS=4.5V, VDS=10V, ID=4.2A

Gate Source Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=10V, f=1MHz

Gate Drain Charge

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

SOA curve provides a single pulse rating.

Rev4 : June 2005

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

www.sztuofeng.com

Feb,2018 V1.0

2016

2016 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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