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8820 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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8820 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 5 page  www.sztuofeng.com Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD 1 V(BR)DSS RDS(on)MAX ID 20V 0.014 Ω @ 4.5V 6.0A 0.018 Ω @ 2.5V MARKING Equivalent Circuit 8820 SOT-23-6 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package Dual N-Channel MOSFET APPLICATION Battery Protection Load Switch Power Management SOT-23-6 8820 ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 V Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 25 A Thermal Resistance from Junction to Ambient (note 2) RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ V 6 8820 Max Y :year code W :week code |
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Similar Description - 8820 |
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