TF2302 datasheet(2/6 Pages) TUOFENG

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Feb,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 ℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max Units

Static

Drain-source breakdown voltage

V(BR)DSS VGS = 0V, ID =-250µA

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

0.5

0.8

1.0

Gate-source leakage

IGSS

VDS =0V, VGS =±12V

±100

Zero gate voltage drain current

IDSS

VDS =16V, VGS =0V

µA

Drain-source on-state resistance a

RDS(on)

VGS =4.5V, ID =3A

0.035

0.045

Ω

VGS =2.5V, ID =2A

0.045

0.055

Forward transconductance a

gfs

VDS =5V, ID =3A

8.0

Dynamicb

Input capacitance

Ciss

300

VDS =10V,VGS =0V,f =1MHz

Output capacitance

Coss

120

Reverse transfer capacitance

Crss

Total gate charge

VDS =10V,VGS =4.5V,ID =3A

Gate-source charge

Gate-drain charge

Turn-on delay time

td(on)

VDD=10V,ID =3A

15.0

Rise time

85.0

VGEN=4.5V,Rg=6Ω

Turn-off delay time

td(off)

45.0

Fall time

20.0

Drain-source body diode characteristics

Continuous source-drain diode current

TC=25

℃

1.0

Body diode voltage

VSD

IS=1.0A

0.7

1.3

Notes :

a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.

b.Guaranteed by design, not subject to production testing.

Qgs

Qgd

1.6

TF2302

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