TF2317 datasheet(2/6 Pages) TUOFENG

2 / 6 page

Electrical Characteristics (T

A = 25°C unless otherwise noted)

TF2317

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

STATIC CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250

µA

-20

DS=-16V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

-0.5

-0.7

-1

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

±100

VGS=-4.5V, IDS=-4.5A

VGS=-2.5V, IDS=-2.5A

RDS(ON)

Drain-Source On-State Resistance

VGS=-1.8V, IDS=-2A

Ω

VSD

Diode Forward Voltage

ISD=-1A, VGS=0V

-0.7

-1.3

GATE CHARGE CHARACTERISTICS

Total Gate Charge

Qgs

Gate-Source Charge

2.1

Qgd

Gate-Drain Charge

VDS=-10V, VGS=-4.5V,

IDS=-4.5A

4.7

TF2317

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-3L Plastic-Encapsulate MOSFETS

DYNAMIC CHARACTERISTICS

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ω

Ciss

Input Capacitance

1520

Coss

Output Capacitance

225

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=-10V,

Frequency=1.0MHz

165

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

156

Turn-off Fall Time

VDD=-10V, RL=10

Ω,

IDS=-1A, VGEN=-4.5V,

RG=6

Ω

trr

Reverse Recovery Time

qrr

Reverse Recovery Charge

ISD=-4.5A, dlSD/dt =100A/µs

Note a : Pulse test ; pulse width

≤300

µs, duty cycle≤2%.

Note b : Guaranteed by design, not subject to production testing.

www.sztuofeng.com

Feb,2018 V1.0

TF2317 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

TF2317 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL