TF3406 datasheet(2/5 Pages) TUOFENG

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Symbol

Min

Typ

Max

Units

BVDSS

IGSS

100

VGS(th)

1.9

ID(ON)

105

Ω

gFS

VSD

0.79

2.5

Ciss

288

375

Coss

Crss

Ω

Qg(10V)

6.5

8.5

Qg(4.5V)

3.1

Qgs

1.2

Qgd

1.6

tD(on)

4.6

1.9

tD(off)

20.1

2.6

trr

10.2

Qrr

3.5

Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=3.6A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VDS=5V, ID=3.6A

VGS=10V, VDS=5V

VGS=10V, ID=3.6A

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=24V, VGS=0V

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Ω

VGS=4.5V, ID=2.8A

IS=1A

Turn-On Rise Time

Gate resistance

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=0V, VDS=0V, f=1MHz

Reverse Transfer Capacitance

Turn-Off DelayTime

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Gate Drain Charge

DYNAMIC PARAMETERS

VGS=10V, VDS=15V, ID=3.6A

VGS=10V, VDS=15V, RL=2.2Ω,

RGEN=3Ω

Gate Source Charge

Turn-On DelayTime

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Rev 5 : July 2005

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

TF3406

www.sztuofeng.com

Feb,2018 V1.0

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