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TF3416 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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TF3416 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 5 page ![]() Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 65 90 85 125 RθJL 43 60 Junction and Storage Temperature Range A PD °C 1.4 -55 to 150 ID 5 30 Pulsed Drain Current B Power Dissipation A TA=25°C Continuous Drain Current A Maximum Units Parameter TA=25°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V ±10 Gate-Source Voltage Drain-Source Voltage 20 °C/W Maximum Junction-to-Ambient A Steady-State °C/W W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA TF3416 ESD Rating: 2000V HBM SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS V(BR)DSS RDS(on)MAX ID 20V 0.026Ω@ 2.5V 6.5 A 0.034Ω@ 1.8V N-Channel 20-V(D-S) MOSFET General FEATURE APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter SOT-23 MARKING Equivalent Circuit 1.GATE 2.SOURCE 3.DRAIN *w:week code w 1 2 3 ● TrenchFET Power MOSFET ● Lead free product is acquired ● Surface mount package 0.022Ω@ 4.5V AG7TF TF3416 ● D S G www.sztuofeng.com Feb,2018 V1.0 1 6.5 |
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