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8205 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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8205 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 6 page ![]() www.sztuofeng.com SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD 1 V(BR)DSS RDS(on)MAX ID 20V 0.025 Ω @ 4.5V 5.0A 0.033 Ω @ 2.5V MARKING Equivalent Circuit SOT-23-6 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management SOT-23-6 ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS V Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 15 A Thermal Resistance from Junction to Ambient (note 2) RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ V 5 Max Y :year code W :week code ±12 8205 Dual N-Channel MOSFET 8205 8205A W Y Oct 2020 V1.1 |
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