S8205B datasheet(1/6 Pages) TUOFENG

Part #	S8205B

Description	Dual N-Channel MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

1

V(BR)DSS

RDS(on)MAX

ID

20V

0.017 Ω @ 4.5V

6.0A

0.021 Ω @ 2.5V

MARKING

Equivalent Circuit

S8205B

SOT-23-6 Plastic-Encapsulate MOSFETS

FEATURE

TrenchFET Power MOSFET

Excellent RDS(on)

Low Gate Charge

High Power and Current Handing Capability

Surface Mount Package

Dual N-Channel MOSFET

APPLICATION

Battery Protection

Load Switch

Power Management

SOT-23-6

ABSOLUTE MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

20

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID

A

Pulsed Drain Current (note 1)

IDM

25

A

Thermal Resistance from Junction to Ambient (note 2)

RθJA

83

℃/W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

TL

260

℃

V

6

S8205B

Max

Y :year code W :week code

8205B

Dec,2018

V1.1

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S8205B Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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