TF3404 datasheet(2/6 Pages) TUOFENG

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Feb,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 ℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max Units

Static

Drain-source breakdown voltage

V(BR)DSS VGS = 0V, ID = 250µA

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID = 250µA

1.2

1.6

2.4

Gate-source leakage

IGSS

VDS =0V, VGS =±20V

±100

Zero gate voltage drain current

IDSS

VDS =24V, VGS =0V

100

Drain-source on-state resistance a

RDS(on)

VGS =4.5V, ID =5A

0. 32

0.035

Ω

Forward transconductance a

gfs

VDS =5V, ID =5A

Dynamicb

Input capacitance

Ciss

255

VDS =15V,VGS =0V,f =1MHz

Output capacitance

Coss

Reverse transfer capacitance

Crss

Total gate charge

VDS =15V,VGS =10V ,ID =5.0A

Gate-source charge

Gate-drain charge

Turn-on delay time

td(on)

VDD=15V,RL =3

4.5

Rise time

2.5

VGS=10V ,Rgen =3Ω

Turn-off delay time

td(off)

14.5

Fall time

3.5

Drain-source body diode characteristics

Continuous source-drain diode current

TC=25

℃

2.5

Body diode voltage

VSD

IS=1.0A

0.7

1.0

Notes :

a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.

b.Guaranteed by design, not subject to production testing.

Qgs

Qgd

0 85

1.3

VGS =10V, ID =5.8A

0.023

0.025

Ω

TF3404

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