Switching Diodes

1

MA3J147

Silicon epitaxial planar type

For high-speed switching circuits

I Features

• Small S-mini type package contained two elements, allowing high-

density mounting

• Two diodes are connected in series in the package

I Absolute Maximum Ratings T

1 : Anode 1

2 : Cathode 2

3 : Cathode 1

Anode 2

Flat S-Mini Type Package (3-pin)

Unit : mm

Internal Connection

Marking Symbol: MS

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

80

V

Peak reverse voltage

80

V

Forward current

Single

100

mA

(DC)

Series

65

Peak forward

Single

225

mA

current

Series

145

Non-repetitive peak

Single

500

mA

Series

325

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Note) * : t = 1 s

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

100

nA

Forward voltage (DC)

1.2

V

Reverse voltage (DC)

V

Terminal capacitance

2

pF

3

ns

Ω

I Electrical Characteristics T

°C

Note) 1. Rated input/output frequency: 100 MHz

1

3

2

1.25

± 0.1

0.425

0.425

2.1

± 0.1

1

2

3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A