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BAV70 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAV70 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() BAV70 www.vishay.com Vishay Semiconductors Rev. 2.2, 13-Feb-18 1 Document Number: 85546 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode, Dual DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note (1) Device on fiberglass substrate Note (1) Device on fiberglass substrate 18108 12 3 Available Models PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAV70 BAV70-E3-08 or BAV70-E3-18 Common cathode JJ Tape and reel BAV70-HE3-08 or BAV70-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Peak reverse voltage VRRM 70 V Reverse voltage VR 70 V Forward current (continuous) IF 250 mA Non repetitive peak forward current tp = 1 μs IFSM 2A tp = 1 ms IFSM 1A tp = 1 s IFSM 0.5 A Power dissipation (1) Ptot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 430 K/W Junction temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C |
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