QPD1026LEVB1 datasheet(2/19 Pages) QORVO

2 / 19 page

QPD1026L

1300 W, 65 V, 420

– 450 MHz, GaN RF Input-Matched Transistor

Datasheet Rev. A December 20

18 │ Subject to change without notice

- 2 of 19-

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Absolute Maximum Ratings 1, 2, 3

Parameter

Rating

Units

Breakdown Voltage,BVDG

225

Gate Voltage Range, VG

-7 to +2

Drain Current, IDMAX

142

Gate Current Range, IG

See pg. 4

Power Dissipation, Pulsed,

PDISS 2

1000

RF Input Power, Pulsed, PIN 3

43.2

dBm

Mounting Temperature

(30 Seconds)

320

°C

Storage Temperature

−65 to +150

°C

Notes:

1. Operation of this device outside the parameter ranges given

above may cause permanent damage

2. Pulsed, 500us PW, 5% DC, Package base at 85 °C

3. Pulsed, 500us PW, 5% DC, T = 25 °C

Recommended Operating Conditions 1, 2, 3, 4

Parameter

Min

Typ

Max Units

Operating Temp. Range

−40

+25

+85

°C

Drain Voltage Range, VD

–

+65

+70

Drain Bias Current, IDQ

1.5

Drain Current, ID 4

–

Gate Voltage, VG 3

–

−2.8

–

Power Dissipation (PD) 2,4

–

907

Power Dissipation (PD), CW 2

–

510

Notes:

1. Electrical performance is measured under conditions noted in

the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions

2. Package base at 85 °C

3. To be adjusted to desired IDQ

4. Pulsed, 500us PW, 5% DC

Measured Load Pull Performance

– 65V Power Tuned 1, 2

Parameter

Typical Values

Units

Frequency, F

420

430

440

450

MHz

Output Power at 3dB compression, P3dB

59.3

59.2

59.1

dBm

Power Added Efficiency at 3dB compression, PAE3dB

59.1

60.0

64.5

69.0

Gain at 3dB compression, G3dB

23.7

24.6

23.8

24.6

Notes:

Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)

Pulsed, 500 us Pulse Width, 5% Duty Cycle.

Measured Load Pull Performance

– 65V Efficiency Tuned 1, 2

Parameter

Typical Values

Units

Frequency, F

420

430

440

450

MHz

Output Power at 3dB compression, P3dB

56.7

56.4

57.5

57.3

dBm

Power Added Efficiency at 3dB compression, PAE3dB

78.9

79.7

80.8

80.6

Gain at 3dB compression, G3dB

27.5

26.4

25.9

26.3

Notes:

Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)

Pulsed, 500 us Pulse Width, 5% Duty Cycle.

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