Electronic Components Datasheet Search
  English  ▼

X  

ESDL1531 Datasheet(PDF) 2 Page - ON Semiconductor

Part # ESDL1531
Description  3.3V ESD Protection Diodes Ultra Low Capacitance ESD Protection Diode for High Speed Data Line
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESDL1531 Datasheet(HTML) 2 Page - ON Semiconductor

  ESDL1531 Datasheet HTML 1Page - ON Semiconductor ESDL1531 Datasheet HTML 2Page - ON Semiconductor ESDL1531 Datasheet HTML 3Page - ON Semiconductor ESDL1531 Datasheet HTML 4Page - ON Semiconductor ESDL1531 Datasheet HTML 5Page - ON Semiconductor ESDL1531 Datasheet HTML 6Page - ON Semiconductor ESDL1531 Datasheet HTML 7Page - ON Semiconductor ESDL1531 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
ESDL1531
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
VRWM
Working Peak Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VHOLD
Holding Reverse Voltage
IHOLD
Holding Reverse Current
RDYN
Dynamic Resistance
IPP
Maximum Peak Pulse Current
VC
Clamping Voltage @ IPP
VC = VHOLD + (IPP * RDYN)
I
V
VCVRWMVHOLD
VBR
RDYN
VC
IR
IT
IHOLD
−IPP
RDYN
IPP
VC = VHOLD + (IPP * RDYN)
VRWM
VHOLD
IR
IT
IHOLD
VBR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
I/O Pin to GND
3.3
V
Breakdown Voltage
VBR
IT = 1 mA, I/O Pin to GND
5.5
8.6
V
Reverse Leakage Current
IR
VRWM = 3.3 V, I/O Pin to GND
1.0
mA
Reverse Holding Voltage
VHOLD
I/O Pin to GND
2.1
V
Holding Reverse Current
IHOLD
I/O Pin to GND
17
mA
Clamping Voltage
TLP (Note 1)
VC
IPP = 8 A
IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
6.5
V
IPP = 16 A
IEC 61000−4−2 Level 2 equivalent
(±8 kV Contact, ±15 kV Air)
10.2
Reverse Peak Pulse Cur-
rent
IPP
IEC61000−4−5 (8/20 ms)
5.7
7.5
A
Clamping Voltage (8/20 ms)
VC
IPP = 5.7 A
5.6
6.5
V
Dynamic Resistance
RDYN
I/O Pin to GND
0.46
W
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
0.15
0.3
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com