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ESDL1531 Datasheet(PDF) 2 Page - ON Semiconductor |
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ESDL1531 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() ESDL1531 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter VRWM Working Peak Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current VHOLD Holding Reverse Voltage IHOLD Holding Reverse Current RDYN Dynamic Resistance IPP Maximum Peak Pulse Current VC Clamping Voltage @ IPP VC = VHOLD + (IPP * RDYN) I V VCVRWMVHOLD VBR RDYN VC IR IT IHOLD −IPP RDYN IPP VC = VHOLD + (IPP * RDYN) VRWM VHOLD IR IT IHOLD VBR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM I/O Pin to GND 3.3 V Breakdown Voltage VBR IT = 1 mA, I/O Pin to GND 5.5 8.6 V Reverse Leakage Current IR VRWM = 3.3 V, I/O Pin to GND 1.0 mA Reverse Holding Voltage VHOLD I/O Pin to GND 2.1 V Holding Reverse Current IHOLD I/O Pin to GND 17 mA Clamping Voltage TLP (Note 1) VC IPP = 8 A IEC 61000−4−2 Level 2 equivalent (±4 kV Contact, ±4 kV Air) 6.5 V IPP = 16 A IEC 61000−4−2 Level 2 equivalent (±8 kV Contact, ±15 kV Air) 10.2 Reverse Peak Pulse Cur- rent IPP IEC61000−4−5 (8/20 ms) 5.7 7.5 A Clamping Voltage (8/20 ms) VC IPP = 5.7 A 5.6 6.5 V Dynamic Resistance RDYN I/O Pin to GND 0.46 W Junction Capacitance CJ VR = 0 V, f = 1 MHz 0.15 0.3 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns. |
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