Switching Diodes

1

MA3S133

Silicon epitaxial planar type

For switching circuits

I Features

• Super-small SS-mini type package contained two elements, allow-

ing high-density mounting

• Two diodes are connected in series in the package

I Absolute Maximum Ratings T

a

= 25°C

1 : Anode 1

2 : Cathode 2

3 : Cathode 1

Anode 2

SS-Mini Type Package (3-pin)

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

80

V

Peak reverse voltage

80

V

Forward current

Single

100

mA

(DC)

Series

65

Peak forward

Single

200

mA

current

Series

130

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

= 75 V

100

nA

Forward voltage (DC)

= 100 mA

1.2

V

Reverse voltage (DC)

V

Terminal capacitance

1

= 0 V, f = 1 MHz

5.5

pF

2

= 0 V, f = 1 MHz

3.0

pF

3

1

= 10 mA, V

R

= 6 V

150

ns

2

9

ns

= 0.1 · I

= 100 Ω

I Electrical Characteristics T

a

= 25°C

Internal Connection

Marking Symbol: MP

Note) 1. Rated input/output frequency: 100 MHz

2. *1 : Between pins 2 and 3

*2 : Between pins 1 and 3

1

3

2

1.60

0.80

1

2

0.44

0.44

3

0.80

± 0.05

0.88

+ 0.05

− 0.03

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A