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MBRA210L Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRA210L Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() MBRA210L, NRVBA210L, NRVBA210LN www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 10 V Average Rectified Forward Current (At Rated VR, TL = 110°C) IO 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 160 A Storage/Operating Case Temperature Operating Junction Temperature Tstg, TC TJ −55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Min Pad 1 Inch Pad Unit Thermal Resistance, Junction−to−Lead Thermal Resistance, Junction−to−Ambient RqJL RqJA 22 150 15 81 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) VF TJ = 25°C TJ = 100°C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.260 0.325 0.350 0.15 0.23 0.26 Maximum Instantaneous Reverse Current IR TJ = 25°C TJ = 100°C mA (VR = 5.0 V) (VR = 10 V) 0.25 0.70 40 60 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. Figure 1. Typical Forward Voltage 0.1 0.2 0.4 0.15 0.45 100 0.1 1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage 0.15 0.35 0.45 0.25 0.55 100 0.1 1 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF @ 125°C 100°C 75°C VF @ 125°C 0.05 0.05 0.3 0.25 0.35 25°C 10 10 25°C 100°C 75°C |
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