VISHAY

BFR93AF

Document Number 85099

Rev. 2, 23-Sep-02

Vishay Semiconductors

www.vishay.com

1

2

1

3

Electrostatic sensitive device.

Observe precautions for handling.

16867

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 1 GHz. In the space-saving

3-pin surface-mount SOT490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT490 is also re-

ducing package inductances resulting in some better

electrical performance. All of these aspects make this

device an ideal choice for demanding RF applica-

tions.

Features

• High power gain

• High transition frequency

• Low noise figure

Applications

Wide band amplifier up to GHz range.

Mechanical Data

Typ: BFR93AF

Case: Plastic case (SOT 490)

Weight: 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Parts Table

Absolute Maximum Ratings

Maximum Thermal Resistance

Electrical DC Characteristics

Part

Marking

Package

BFR93AF

R2

SOT490

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

20

V

Collector-emitter voltage

12

V

Emitter-base voltage

2

V

Collector current

50

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

- 65 to + 150

°C

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

1/

450

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector cut-off current

100

µA

Collector-base cut-off current

100

nA