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TLN217 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TLN217
Description  Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLN217 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLN217
2002-02-20
2
Optical and Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Pulse forward voltage
VFP
IFP = 300 mA, t = 10 ms
¾
1.6
1.75
V
Reverse current
IR
VR = 1 V
¾
¾
100
mA
X
Half value of peak
(Note 2)
¾
466
¾
Effective emission spot size
Y
Half value of peak
(Note 2)
¾
210
¾
mm
Radiation flux
fe
IFP = 300 mA, t = 10 ms
(Note 3)
12
17
¾
mW
Half value angle
q
2
1
IF = 50 mA
¾
±32.5
¾
°
Peak emission wavelength
lp
IF = 50 mA
850
870
900
nm
Spectral line half width
Dl
IF = 50 mA
¾
35
¾
nm
Note 2: The directions of X and Y are in the following diagram.
The shaded area represents the emitting surface.
Note 3: Luminous radiation output to effective angle
= ±25°
Precaution
· Soldering temperature: 260°C (max)
Soldering time: 5 s (max)
(Soldering must be performed 2 mm from the bottom of the package.)
· When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be
performed after the leads have been formed.
· The TLN217 is intended for a camera AF use only. Please do not use this device except for a camera.
Y
X
(LED chip)



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