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TLN217 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLN217 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() TLN217 2002-02-20 2 Optical and Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Pulse forward voltage VFP IFP = 300 mA, t = 10 ms ¾ 1.6 1.75 V Reverse current IR VR = 1 V ¾ ¾ 100 mA X Half value of peak (Note 2) ¾ 466 ¾ Effective emission spot size Y Half value of peak (Note 2) ¾ 210 ¾ mm Radiation flux fe IFP = 300 mA, t = 10 ms (Note 3) 12 17 ¾ mW Half value angle q 2 1 IF = 50 mA ¾ ±32.5 ¾ ° Peak emission wavelength lp IF = 50 mA 850 870 900 nm Spectral line half width Dl IF = 50 mA ¾ 35 ¾ nm Note 2: The directions of X and Y are in the following diagram. The shaded area represents the emitting surface. Note 3: Luminous radiation output to effective angle = ±25° Precaution · Soldering temperature: 260°C (max) Soldering time: 5 s (max) (Soldering must be performed 2 mm from the bottom of the package.) · When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be performed after the leads have been formed. · The TLN217 is intended for a camera AF use only. Please do not use this device except for a camera. Y X (LED chip) |
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