BAS40 datasheet(2/5 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

BAS40

SCHOTTKY DIODES

120mA, 40V

REV1.1

- JAN 2014 RELEASED, JUN 2021 UPDATED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

VR, Continuous Reverse Voltage

40V

IF, Continuous Forward Current

120mA

IFSM, Repetitive Peak Forward Surge Current (tp≦1s;δ≦0.5)

120mA

IFSM, Non-repetitive Peak Forward Current (tp<10ms)

200mA

TSTG, Storage Temperature

-65~+150°C

TJ, Junction Temperature

150°C

TAMB, Operating Ambient Temperature

-65~+150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

TA = 25°C

Parameter

Symbol

Conditions

Max.

Unit

Forward Voltage (Fig.1)

IF=1mA

IF=10mA

IF=40mA

400

560

Reverse Current (Fig.2)NOTE1

VR=30V

VR=40V

μA

Diode Capacitance (Fig.4)

f=1MHz;VR=0

NOTE1: Pulse test:tp=300μs;δ=0.02.

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

Thermal Resistance from Junction to Ambient

Rth j-a

500

k/w

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