BAV19WS datasheet(2/5 Pages) AITSEMI

2 / 5 page

AiT Semiconductor Inc.

www.ait-ic.com

BAV19WS~ BAV21WS

SWITCHING DIODE

SILICON EPITAXIAL PLANAR HIGH VOLTAGE DIODE

REV1.0

- DEC 2017 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

TA= 25°C

Parameter

Symbol

BAV19WS BAV20WS BAV21WS

Unit

Repetitive Peak Reverse Voltage

VRRM

120

200

250

Reverse Voltage

100

150

200

Average Rectified Forward Current

IF(AV)

200

Forward Continuous Current

IFM

400

Repetitive Peak Forward Current

IFRM

625

Non-Repetitive

Peak

Forward

Surge Current

t=1us

t=1s

IFSM

2.5

0.5

Power Dissipation

Ptot

200

Operating and Storage Temperature Rage

TJ ,TSTG

-65 ~ +150

°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

TA= 25°C

Parameter

Symbol

Conditions

Min.

Max.

Unit

Reverse Breakdown Voltage

V(BR)R

IR=100uA

BAV19WS

BAV20WS

BAV21WS

120

200

250

Reverse Current

VR=100V

VR=150V

VR=200V

BAV19WS

BAV20WS

BAV21WS

100

Forward Voltage

IF=100mA

IF=200mA

1.25

Total Capacitance

VR=0V，f=1MHz

Reverse Recovery Time

trr

IF=IR=30mA，

IRR=0.1x IR，RL=100Ω

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