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BD13616S Datasheet(PDF) 2 Page - ON Semiconductor |
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BD13616S Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() BD136 Series www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) BD136 BD138 BD140 IC = −30 mA, IB = 0 −45 −60 −80 V ICBO Collector Cut−off Current VCB = −30 V, IE = 0 −0.1 mA IEBO Emitter Cut−off Current VEB = −5 V, IC = 0 −10 mA hFE1 DC Current Gain (Note 1) VCE = −2 V, IC = −5 mA 25 hFE2 VCE = −2 V, IC = −150 mA BD13610/BD13810/BD14010 BD13616/BD13816/BD14016 63 100 160 250 hFE3 VCE = −2 V, IC = −500 mA 25 VCE(sat) Collector−Emitter Saturation Voltage (Note 1) IC = 500 mA, IB = 50 mA −0.5 V VBE(on) Base−Emitter ON Voltage (Note 1) VCE = −2 V, IC = −0.5 A −1 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: PW = 350 ms, duty Cycle = 2% Pulsed |
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