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BD13616S Datasheet(PDF) 2 Page - ON Semiconductor

Part # BD13616S
Description  PNP Epitaxial Silicon Transistor
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD13616S Datasheet(HTML) 2 Page - ON Semiconductor

  BD13616S Datasheet HTML 1Page - ON Semiconductor BD13616S Datasheet HTML 2Page - ON Semiconductor BD13616S Datasheet HTML 3Page - ON Semiconductor BD13616S Datasheet HTML 4Page - ON Semiconductor BD13616S Datasheet HTML 5Page - ON Semiconductor  
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BD136 Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1)
BD136
BD138
BD140
IC = −30 mA, IB = 0
−45
−60
−80
V
ICBO
Collector Cut−off Current
VCB = −30 V, IE = 0
−0.1
mA
IEBO
Emitter Cut−off Current
VEB = −5 V, IC = 0
−10
mA
hFE1
DC Current Gain (Note 1)
VCE = −2 V, IC = −5 mA
25
hFE2
VCE = −2 V, IC = −150 mA
BD13610/BD13810/BD14010
BD13616/BD13816/BD14016
63
100
160
250
hFE3
VCE = −2 V, IC = −500 mA
25
VCE(sat)
Collector−Emitter Saturation Voltage
(Note 1)
IC = 500 mA, IB = 50 mA
−0.5
V
VBE(on)
Base−Emitter ON Voltage (Note 1)
VCE = −2 V, IC = −0.5 A
−1
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: PW = 350 ms, duty Cycle = 2% Pulsed



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