IRL520 datasheet(2/9 Pages) VISHAY

2 / 9 page

IRL520

www.vishay.com

Vishay Siliconix

S21-1046-Rev. C, 25-Oct-2021

Document Number: 91298

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

-62

°C/W

Case-to-sink, flat, greased surface

RthCS

0.50

Maximum junction-to-case (drain)

RthJC

-2.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

100

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.12

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.0

2.0

Gate-source leakage

IGSS

VGS = ± 10 V

± 100

Zero gate voltage drain current

IDSS

VDS = 100 V, VGS = 0 V

μA

VDS = 80 V, VGS = 0 V, TJ = 150 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 5.0 V

ID = 5.5 Ab

0.27

VGS = 4.0 V

ID = 4.6 Ab

0.38

Forward transconductance

gfs

VDS = 50 V, ID = 5.5 A

3.2

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

490

Output capacitance

Coss

150

Reverse transfer capacitance

Crss

-30

Total gate charge

VGS = 5.0 V

ID = 9.2 A, VDS = 80 V,

see fig. 6 and 13b

Gate-source charge

Qgs

3.0

Gate-drain charge

Qgd

7.1

Turn-on delay time

td(on)

VDD = 50 V, ID = 9.2 A,

Rg = 9.0

Ω, RD = 5.2 Ω, see fig. 10b

-9.8

Rise time

-64

Turn-off delay time

td(off)

-21

Fall time

-27

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal source inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

9.2

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb

2.5

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb

130

190

Body diode reverse recovery charge

Qrr

-0.83

1.0

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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