FQD2N60C datasheet(2/8 Pages) ONSEMI

2 / 8 page

October-2017,Rev.2

Publication Order Number:

FQU2N60C/D

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Thermal Characteristics

Symbol

Parameter

FQD2N60CTM / FQU2N60CTU

Unit

VDSS

Drain-Source Voltage

600

Drain Current

- Continuous (TC = 25°C)

1.9

- Continuous (TC = 100°C)

1.14

IDM

Drain Current

- Pulsed

(Note 1)

7.6

VGSS

Gate-Source Voltage

± 30

EAS

Single Pulsed Avalanche Energy

(Note 2)

120

IAR

Avalanche Current

(Note 1)

1.9

EAR

Repetitive Avalanche Energy

(Note 1)

4.4

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation (TA = 25°C)*

2.5

Power Dissipation (TC = 25°C)

- Derate above 25°C

0.35

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQD2N60CTM /

FQU2N60CTU

Unit

RθJC

Thermal Resistance, Junction-to-Case, Max.

2.87

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.

110

Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max.

FQD2N60C / FQU2N60C

N-Channel QFET® MOSFET

600 V, 1.9 A, 4.7 Ω

Features

• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,

ID = 0.95 A

• Low Gate Charge (Typ. 8.5 nC)

• Low Crss (Typ. 4.3 pF)

• 100% Avalanche Tested

•RoHS Compliant

Description

This N-Channel enhancement mode power MOSFET is

produced using ON Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

I-PAK

D-PAK

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