SiSF06DN

www.vishay.com

Vishay Siliconix

S19-1142-Rev. A, 13-Jan-2020

1

Document Number: 77407

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Common Drain Dual N-Channel 30 V (S1-S2) MOSFET

FEATURES

• Very low source-to-source on resistance

• Integrated common-drain n-channel MOSFETs

in a compact and thermally enhanced package

• Optimizes circuit layout for bi-directional current flow

• Material categorization: for definitions of compliance

APPLICATIONS

• Battery protection switch

• Bi-directional switch

•Load switch

Notes

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 63 °C/W

g. Single MOSFET

PRODUCT SUMMARY

30

0.00450

0.00695

14

101

Configuration

Common drain

SCD

1

G

1

2

D

1

3

D

2

4

G

2

S

1

8

S

1

7

S

2

6

S

2

5

S

1

S

2

Top View

Bottom View

3.3

mm

1

3.3

mm

N-Channel 1 MOSFET

N-Channel 2 MOSFET

G

2

S

2

G

1

S

1

ORDERING INFORMATION

Package

PowerPAK 1212-8SCD

Lead (Pb)-free and halogen-free

SiSF06DN-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

30

V

Gate-source voltage

+20 / -16

101

A

81

Pulsed drain current (t = 100 μs)

190

Maximum power dissipation

69.4

W

44.4

Operating junction and storage temperature range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

≤ 10 s

19

24

°C/W

Maximum junction-to-case (drain)

Steady state

1.4

1.8