NTJD2152P datasheet(1/6 Pages) ONSEMI

Part #	NTJD2152P

Description	Trench Small Signal MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 6 page

January, 2004 − Rev. 2

1

Publication Order Number:

NTJD2152/D

NTJD2152P

Trench Small Signal

MOSFET

8 V, Dual P−Channel, SC−88

ESD Protection

Features

• Leading –8 V Trench for Low R

DS(ON) Performance

• ESD Protected Gate

• Small Footprint (2 x 2 mm)

• Same Package as SC−70−6

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

Applications

• Load Power switching

• DC−DC Conversion

• Li−Ion Battery Charging Circuits

• Cell Phones, Media Players, Digital Cameras, PDAs

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−8.0

V

Gate−to−Source Voltage

VGS

±8.0

V

Continuous Drain

Current

Steady

State

TA = 25 °C

ID

−0.775

A

Current

(Based on RqJA)

State

TA = 85 °C

−0.558

Power Dissipation

(Based on R

)

Steady

State

TA = 25 °C

PD

0.27

W

(Based on RqJA)

State

TA = 85 °C

0.14

Continuous Drain

Current

Steady

State

TA = 25 °C

ID

−1.1

A

Current

(Based on RqJL)

State

TA = 85 °C

−0.8

Power Dissipation

(Based on R

)

Steady

State

TA = 25 °C

P

0.55

W

(Based on RqJL)

State

TA = 85 °C

PD

0.29

Pulsed Drain Current

t

≤10 ms

IDM

±1.2

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Continuous Source Current (Body Diode)

IS

−0.775

A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol

Typ

Max

Unit

Junction−to−Ambient – Steady State

RqJA

400

460

°C/W

Junction−to−Lead (Drain) – Steady State

RqJL

194

226

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

Top View

SC−88 (SOT−363)

CASE 419B

Style 26

MARKING DIAGRAM

6

1

http://onsemi.com

TA

= Device Code

D

= Date Code

16

Drain−1

Gate−2

Source−2

Source−1

Gate−1

Drain−2

Top View

SOT−363

SC−88 (6 LEADS)

D1

G2

S2

S1

G1

6

5

4

1

2

3

V(BR)DSS

RDS(on) TYP

ID Max

−8 V

0.22

W @ −4.5 V

0.32

W @ −2.5 V

0.51

W @ −1.8 V

−0.775 A

PIN ASSIGNMENT

TAD

D2

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Similar Part No. - NTJD2152P

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTJD2152P	133Kb / 6P	Trench Small Signal MOSFET March, 2006 ??Rev. 3
	NTJD2152PT1	133Kb / 6P	Trench Small Signal MOSFET March, 2006 ??Rev. 3
	NTJD2152PT1G	133Kb / 6P	Trench Small Signal MOSFET March, 2006 ??Rev. 3
	NTJD2152PT2	133Kb / 6P	Trench Small Signal MOSFET March, 2006 ??Rev. 3
	NTJD2152PT2G	133Kb / 6P	Trench Small Signal MOSFET March, 2006 ??Rev. 3

More results

Similar Description - NTJD2152P

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	CMT2N7000	118Kb / 5P	Small Signal MOSFET
ON Semiconductor	NTJD4001N	46Kb / 6P	Small Signal MOSFET August, 2003 ??Rev. 0
	BS170	52Kb / 4P	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET April, 2004 ??Rev. 4
	NTJD2152P	133Kb / 6P	Trench Small Signal MOSFET March, 2006 ??Rev. 3
SeCoS Halbleitertechnol...	2N7002DW	142Kb / 3P	Small Signal MOSFET
Leshan Radio Company	L2N7002KDW1T1G	1Mb / 6P	Small Signal MOSFET
	L2N7002KN3T5G	230Kb / 5P	Small Signal MOSFET
	L2N7002KWT1G	685Kb / 6P	Small Signal MOSFET
	L2N7002M3T5G	173Kb / 4P	Small Signal MOSFET
ON Semiconductor	NTJD4152P	75Kb / 5P	Trench Small Signal MOSFET February, 2015 ??Rev. 6

More results

NTJD2152P Datasheet(PDF) 1 Page - ON Semiconductor

NTJD2152P Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - NTJD2152P

Similar Description - NTJD2152P

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL