IRLL014 datasheet(3/8 Pages) VISHAY

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IRLL014, SiHLL014

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Vishay Siliconix

S21-0322-Rev. G, 05-Apr-2021

Document Number: 91319

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

20 µs Pulse Width

C = 25 °C

VDS, Drain-to-Source Voltage (V)

100

101

10-1

2.25 V

Bottom

Top

7.5 V

5.0 V

4.0 V

3.5 V

3.0 V

2.75 V

2.5 V

10-2

10-1

101

100

20 µs Pulse Width

C = 150 °C

VDS, Drain-to-Source Voltage (V)

100

101

10-2

10-1

2.25 V

Bottom

Top

7.5 V

5.0 V

4.0 V

3.5 V

3.0 V

2.75 V

2.5 V

10-1

101

100

20 µs Pulse Width

DS = 25 V

101

10-2

10-3

VGS, Gate-to-Source Voltage (V)

2.5

3.5

4.5

25 °C

150 °C

10-1

100

D = 10 A

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

700

600

400

300

100

200

100

101

VDS, Drain-to-Source Voltage (V)

iss

rss

oss

GS = 0 V, f = 1 MHz

iss = Cgs + Cgd, Cds Shorted

rss = Cgd

oss = Cds + Cgd

500

QG, Total Gate Charge (nC)

DS = 30 V

DS = 48 V

For test circuit

see figure 13

D = 10 A

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