IRFR9014 datasheet(2/13 Pages) VISHAY

2 / 13 page

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014

www.vishay.com

Vishay Siliconix

S21-0771-Rev. F, 19-Jul-2021

Document Number: 91277

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

110

°C/W

Maximum junction-to-ambient

(PCB mount) a

RthJA

Maximum junction-to-case (drain)

RthJC

5.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = - 250 μA

-60

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = -1 mA

-0.059

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = -250 μA

-2.0

-4.0

Gate-source leakage

IGSS

VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VDS = -60 V, VGS = 0 V

-100

μA

VDS = -48 V, VGS = 0 V, TJ = 125 °C

-500

Drain-source on-state resistance

RDS(on)

VGS = -10 V

ID = -3.1 A b

0.50

Forward transconductance

gfs

VDS = -25 V, ID = -3.1 A b

1.4

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = -25 V,

f = 1.0 MHz, see fig. 5

270

Output capacitance

Coss

170

Reverse transfer capacitance

Crss

-31

Total gate charge

VGS = - 10 V

ID = -6.7 A, VDS = -48 V,

see fig. 6 and 13 b

Gate-source charge

Qgs

3.8

Gate-drain charge

Qgd

5.1

Turn-on delay time

td(on)

VDD = -30 V, ID = -6.7 A,

Rg = 24

Ω, RD = 4.0 Ω, see fig. 10 b

-11

Rise time

-63

Turn-off delay time

td(off)

-9.6

Fall time

-31

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center of

die contact c

-4.5

Internal source inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

-5.1

Pulsed diode forward current a

ISM

-20

Body diode voltage

VSD

TJ = 25 °C, IS = -5.1 A, VGS = 0 V b

-5.5

Body diode reverse recovery time

trr

TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μs b

160

Body diode reverse recovery charge

Qrr

0.096

0.19

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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