IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

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Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

3

Document Number: 91062

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91062_01

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

4.5 V

10

10

1

0.1

0.1

1

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

91062_02

4.5 V

10

1

0.1

10

20 µs Pulse Width

V

5.0

6.0

7.0

8.0

4.0

91062_03

T

T

10

1

0.1

I

V

0.0

0.5

1.0

1.5

2.0

2.5

91062_04

- 60 - 40 - 20

0

20 40 60 80 100 120 140 160

10

C

iss

C

rss

C

oss

V

C

C

C

91062_05

1

10

1

20

16

12

8

0

4

8

24

20

16

12

V

V

For test circuit

see figure 13

V

91062_06

I

4

0