IRF9640L datasheet(2/10 Pages) VISHAY

2 / 10 page

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

www.vishay.com

Vishay Siliconix

S21-0904-Rev. F, 30-Aug-2021

Document Number: 91087

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Maximum Junction-to-Ambient

(PCB mount) a

RthJA

-40

Maximum Junction-to-Case (Drain)

RthJC

-1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = -250 μA

-200

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = -1 mA

-0.20

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 μA

-2.0

-4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = -200 V, VGS = 0 V

-100

μA

VDS = -160 V, VGS = 0 V, TJ = 125 °C

-500

Drain-Source On-State Resistance

RDS(on)

VGS = -10 V

ID = 6.6 A b

0.50

Forward Transconductance

gfs

VDS = -50 V, ID = -6.6 A b

4.1

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = -25 V,

f = 1.0 MHz, see fig. 5

1200

Output Capacitance

Coss

370

Reverse Transfer Capacitance

Crss

-81

Total Gate Charge

VGS = -10 V

ID = -11 A, VDS = -160 V,

see fig. 6 and 13 b

Gate-Source Charge

Qgs

7.1

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = -100 V, ID = -11 A,

Rg = 9.1

Ω, RD = 8.6 Ω, see fig. 10 b

-14

Rise Time

-43

Turn-Off Delay Time

td(off)

-39

Fall Time

-38

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Gate Input Resistance

f = 1 MHz, open drain

0.3

1.7

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p -n junction diode

-11

Pulsed Diode Forward Current a

ISM

-44

Body Diode Voltage

VSD

TJ = 25 °C, IS = -11 A, VGS = 0 V b

-5.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs b

250

300

Body Diode Reverse Recovery Charge

Qrr

-2.9

3.6

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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