IRFD9120 datasheet(2/9 Pages) VISHAY

2 / 9 page

IRFD9120

www.vishay.com

Vishay Siliconix

S21-0887-Rev. F, 30-Aug-2021

Document Number: 91139

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

120

°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = -250 μA

-100

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = -1 mA

-0.10

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = -250 μA

-2.0

-4.0

Gate-source leakage

IGSS

VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VDS = -100 V, VGS = 0 V

-100

μA

VDS = -80 V, VGS = 0 V, TJ = 150 °C

-500

Drain-source on-state resistance

RDS(on)

VGS = -10 V

ID = -0.6 A b

0.60

Forward transconductance

gfs

VDS = -50 V, ID = -0.60 A b

0.71

Dynamic

Input capacitance

Ciss

VGS = 0 V

VDS = -25 V

f = 1.0 MHz, see fig. 5

390

Output capacitance

Coss

170

Reverse transfer capacitance

Crss

-45

Total gate charge

VGS = -10 V

ID = -6.8 A, VDS = -80 V

see fig. 6 and 13 b

Gate-source charge

Qgs

3.0

Turn-on delay time

Qgd

9.0

Rise time

td(on)

VDD = -50 V, ID = -6.8 A

Rg = 18

Ω, RD = 7.1 Ω, see fig. 10 b

-9.6

Turn-off delay time

-29

Fall time

td(off)

-21

Turn-on delay time

-25

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

Internal source inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

-1.0

Pulsed diode forward current a

ISM

-8.0

Body diode voltage

VSD

TJ = 25 °C, IS = -1.0 A, VGS = 0 V b

-6.3

Body diode reverse recovery time

trr

TJ = 25 °C, IF = -6.8 A, di/dt = 100 A/μs b

200

Body diode reverse recovery charge

Qrr

-0.33

0.66

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

IRFD9120 Datasheet(PDF) 2 Page - Vishay Siliconix

IRFD9120 Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL