SI7328DN datasheet(2/12 Pages) VISHAY

2 / 12 page

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Document Number: 73960

S-81005-Rev. B, 05-May-08

Vishay Siliconix

Si7328DN

New Product

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 81 °C/W.

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

≤ 10 s

RthJA

°C/W

Steady State

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.9

2.4

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 18.9 A

0.0055

0.0066

VGS = 4.5 V, ID = 17.65 A

0.0063

0.0076

Forward Transconductancea

gfs

VDS = 15 V, ID = 18.9 A

Diode Forward Voltage

VSD

IS = 3.2 A, VGS = 0 V

0.7

1.2

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

2610

Output Capacitance

Coss

300

Reverse Transfer Capacitance

Crss

140

Total Gate Charge

VDS = 15 V, VGS = 4.5 V, ID = 18.9 A

31.5

Gate-Source Charge

Qgs

7.5

Gate-Drain Charge

Qgd

2.5

Gate Resistance

f = 1 MHz

0.5

1.2

1.8

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 0.86 Ω

ID ≅ 17.3 A, VGEN = 10 V, Rg = 1 Ω

Rise Time

Turn-Off Delay Time

td(off)

52.5

Fall Time

812

Body Diode Reverse Recovery Time

trr

IF = 3.2 A, dI/dt = 100 A/µs

Body Diode Reverse Recovery Charge

Qrr

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