F1129MB datasheet(1/22 Pages) RENESAS

Part #	F1129MB

Description	50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

PDF	22 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

1 / 22 page

50Ω SE-In – 100Ω DIFF-Out

Amplifier 3.0GHz to 4.2GHz

F1129MB

Datasheet

1

January 31, 2021

Description

The F1129MB is a single-ended input / differential output 3GHz to

4.2GMHz high gain RF amplifier. The combination of impedance

translation, high gain, high linearity, and low noise performance

makes this device an ideal amplifier for a variety of receiver

applications.

The F1129MB has been optimized to operate with a single 5V

power supply and a nominal 60mA of ICC. When operated at

3.55GHz, the F1129MB provides 19dB typical gain with 1.8dB

noise figure and +32dBm OIP3.

The F1129MB is pin-compatible with Renesas’ F1129xx family of

RF amplifiers, offering additional frequency and output impedance

options. Each F1129 variant is packaged in a 2 × 2 mm, 12-pin

DFN, with a 50Ω single-ended RF input and 100Ω differential RF

output impedances for ease of integration into the signal-path.

F1129xx Base

Part Number

Differential Output

Impedance

Frequency

Band

Frequency

Coverage

F1129LB

100Ω

Low

1.4GHz to

3.2GHz

F1129MB

100Ω

Mid

3.0GHz to

4.2GHz

F1129HB

100Ω

High

4.0GHz to

6.0GHz

Competitive Advantage



High gain



Excellent gain flatness over frequency



Outstanding gain variance over temperature



STBY feature



Differential output to directly drive transceiver inputs

Typical Applications



5G / Massive MIMO Base Stations



4G TDD and FDD Base Stations



2G/3G Base Stations



Repeaters and DAS



Point to Point Infrastructure



Public Safety Infrastructure



Military Handhelds

Features



RF range: 3.0GHz to 4.2GHz



Gain = 19dB at 3.55GHz



Noise figure = 1.8dB at 3.55GHz



OIP3 = +32dBm at 3.55GHz



Output P1dB = +18dBm at 3.55GHz



Gain variation over temperature = ±0.15dB typical



50Ω single-ended input impedances



100Ω differential output impedances



3.3V or 5V power supply



ICC = 60mA at 5V



1.3mA standby current



1.8V and 3.3V logic support for STBY control



Operating temperature (TEP) range: -40°C to +115°C



2 × 2 mm, 12-DFN package

Block Diagram

Figure 1. F1129MB Block Diagram

RF_IN

RF_OUT +

RF_OUT -

Bias

F1129MB

Bias and Control

Similar Part No. - F1129MB

Manufacturer	Part #	Datasheet	Description
Polyfet RF Devices	F1120	44Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???
Feinmetall GmbH	F11211B050G040	108Kb / 1P	Basic Contact Probe
	F11212B090G040	109Kb / 1P	Basic Contact Probe
	F11218B053G040	108Kb / 1P	Basic Contact Probe
Baumer IVO GmbH & Co. K...	F112450KC3B	551Kb / 4P	Totalizers electromechanic

More results

Similar Description - F1129MB

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	CMM6001-SC	393Kb / 4P	60MHz TO 3.0GHz HIGH DYNAMIC RANGE AMPLIFIER
Micrel Semiconductor	SY89871U	163Kb / 10P	2.5GHz ANY DIFF. IN-TO-LVPECL PROGRAMMABLE CLOCK DIVIDER
	SY89874U	151Kb / 10P	2.5GHz ANY DIFF. IN-TO-LVPECL PROGRAMMABLE CLOCK DIVIDER
	SY89875U_0708	199Kb / 10P	2.5V, 2.0GHz ANY DIFF. IN-TO-LVDS
	SY89873L_0708	111Kb / 11P	3.3V, 2.0GHz ANY DIFF. IN-TO-LVDS
	SY89872U_0708	178Kb / 10P	2.5V, 2GHz ANY DIFF. IN-TO-LVDS
TriQuint Semiconductor	TGA4960-SL	132Kb / 1P	100 / 200 Gb/s Quad Diff In / Diff Out Linear Driver
Renesas Technology Corp	F4481	3Mb / 45P	DIFF-In/SE-Out Quad Path TX DVGA 400MHz to 1100MHz
	F4482	4Mb / 49P	DIFF-In / SE-Out Quad Path TX DVGA 1300MHz to 2800MHz
	F1429MB	2Mb / 21P	100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz January 31, 2021

More results

F1129MB Datasheet(PDF) 1 Page - Renesas Technology Corp

F1129MB Datasheet(HTML) 1 Page - Renesas Technology Corp

Similar Part No. - F1129MB

Similar Description - F1129MB

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

Datasheet Download

Link URL