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2N2222AS-AB Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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2N2222AS-AB Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() COLLECTOR 3 1 BASE 2 EMITTER S E M IC O NDUC TO R TECHNICAL DATA 2N2222AS-AB SOT-23 1. FEATURES • Silicon NPN transistor in a SOT-23 Plastic Package • Collector currents up to 600 mA, Qualified to AEC-Q101 Standards for High Reliability, HF Product • General purpose amplifier, Meet the stringent requirements of automotive applications 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25ºC) 4. THERMAL CHARACTERISTICS 1. FR–5 = 1.0×0.75×0.062 in. General Purpose Transistors NPN Silicon Device Marking Shipping 2N2222AS-AB Q1P 3000/Tape&Reel Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 40 V Collector–Base Voltage VCBO 75 V Emitter–Base Voltage VEBO 6 V Collector Current — Continuous IC 600 mA Parameter Symbol Limits Unit Total Device Dissipation, PD FR −5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC Thermal Resistance, Junction–to–Ambient(Note 1) RθJA 556 ºC/W Junction–to–Case RθJC 300 ºC/W Junction and Storage temperature TJ,Tstg −55~+150 ºC 2022. 04. 28 Revision No : 0 1/5 |
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