2N3906S-AL datasheet(2/5 Pages) FS

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2022. 04. 21

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5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Characteristic

Collector–Emitter Breakdown Voltage

(IC = -1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = -10 μAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = -10 μAdc, IC = 0)

Collector Cutoff Current

( VCE = -30 Vdc, VEB = -3.0Vdc)

Base Cutoff Current

(VCE = -30 Vdc, VEB = -3.0Vdc)

ON CHARACTERISTICS (Note 2.)

DC Current Gain

(IC = -0.1 mAdc, VCE = -1.0 Vdc)

(IC = -1.0 mAdc, VCE = -1.0 Vdc)

(IC = -10 mAdc, VCE = -1.0 Vdc)

(IC = -50 mAdc, VCE = -1.0 Vdc)

(IC = -100 mAdc, VCE = -1.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = -10 mAdc, IB = -1.0 mAdc)

(IC = -50 mAdc, IB = -5.0 mAdc)

Base–Emitter Saturation Voltage

(IC = -10 mAdc, IB = -1.0 mAdc)

(IC = -50 mAdc, IB = -5.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = -10mAdc, VCE= -20Vdc, f = 100MHz)

Output Capacitance

(VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

2.Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.

(VCC = -3.0 Vdc,VBE=0.5Vdc,

IC = -10mAdc, IB1 = -1.0 mAdc)

(VCC = -3.0 Vdc, IC = -10

mAdc,IB1 = IB2 = -1.0 mAdc)

225

MHz

-0.25

-0.4

-0.65

-0.85

-0.95

250

VBE(sat)

Cobo

Cibo

4.5

Unit

VBR(CEO)

-40

Symbol

Min.

VBR(CBO)

-40

VBR(EBO)

-5

Typ.

Max.

ICEX

-50

VCE(sat)

IBL

-50

HFE

100

300

2N3906S-AL

2N3906S-AL Datasheet(PDF) 2 Page - First Silicon Co., Ltd

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