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7N65 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 7N65
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

7N65 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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7N65
- 1 -
Description
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Max.
Units
TO-220
TO-220F
VDSS
Drain-Source Voltage
650
V
VGSS
Gate-Source Voltage
±30
V
ID
Continuous Drain Current
TC = 25℃
7
7*
A
TC = 100℃
4.3
4.3*
A
IDM
Pulsed Drain Current note1
28
28*
A
EAS
Single Pulsed Avalanche Energy note2
200
mJ
dv/dt
Peak Diode Recovery Energy note3
4.5
V/ns
PD
Power Dissipation
TC = 25℃
125
30
W
Linear Derating Factor
TC > 25℃
1
0.24
W/℃
RθJC
Thermal Resistance, Junction to Case
1
4.2
℃/W
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
℃/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃
*Drain current limited by maximum junction temperature
650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
 RDS(ON) = 1.27Ω (Max.) @ VGS = 10V, ID = 3.5A
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
Application
 DC-DC & DC-AC Converters
 Uninterruptible Power Supply (UPS)
 Switch Mode Low Power Supplies
Package
TO-220
TO-220F
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
www.sztuofeng.com
,2018 V1.0
Mar


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