FEATURES

Metal-semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

3.Thermal resistance junction to ambient

NOTE: 1. Pulse test:300us pulse width,1% duty cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

For use in low voltage,high frequencyinverters free

wheeling,and polarityprotection applications

VOLTAGE RANGE: 50 --- 600 V

CURRENT: 3.0A

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

www.diode.co.kr

1.

SAMYANG ELECTRONICS

SAM YANG

ES3AA --- ES3JA

CHARACTERISTICS

SYMBOL

ES3AA

ES3BA

ES3DA

ES3GA

ES3JA

UNIT

Maximum Recurrent Peak Reverse Voltage

50

100

200

400

600

V

Maximum RMS Voltage

35

70

140

280

420

V

Maximum DC Blocking Voltage

50

100

200

400

600

V

Maximum Average Forward

Rectified Current

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load(JEDEC Method)

Peak Forward Voltage at 3.0A DC

1.3

1.70

V

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Maximum Reverse Recovery Time(Note 1)

nS

Typical Junction Capacitance (Note2)

pF

Typical Thermal Resistance (Note3)

!

/W

Operating Temperature Range

!

Storage Temperature Range

!

0.95

45

70

100

A

100

A

3.0

-55 to +150

-55 to +150

A

5.0

20

35

Case:JEDEC DO-214AC,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.003 ounces,0.093 grams

Mounting position: Any

DO-214AC(SMA)

inch(mm)

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