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TF3403 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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TF3403 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 5 page ![]() Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 70 90 100 125 RθJL 63 80 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±20 Gate-Source Voltage Drain-Source Voltage -30 Continuous Drain Current A Maximum Units Parameter TA=25°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V -20 Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD °C 1.25 -55 to 150 ID -2.6 Features TF3403 www.sztuofeng.com ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS 1 Mar P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) - 30 0.130 at VGS = - 10 V - 2.6 0.200 at VGS = - 4.5 V - 2.0 General FEATURE ● TrenchFET Power MOSFET ● Lead free product is acquired ● Surface mount package APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter SOT-23 MARKING Equivalent Circuit w 1.GATE 2.SOURCE 3.DRAIN *w:week code 1 2 3 A96TF |
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