FMMT416 datasheet(3/5 Pages) DIODES

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FMMT416

Datasheet number: DS42112 Rev. 2 - 2

3 of 5

www.diodes.com

July 2019

FMMT416

Thermal Characteristics and Derating information

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

315

—

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCEO

100

—

IC = 100µA

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA

Collector Cutoff Current

ICBO

—

100

µA

VCB = 310V

VCB = 310V, TJ = +100°C

Emitter Cutoff Current

IEBO

—

VEB = 6V

Static Forward Current Transfer Ratio (Note 8)

hFE

100

—

IC = 10mA, VCE = 10V

Collector-Emitter Saturation Voltage (Note 8)

VCE(sat)

—

100

IC = 10mA, IB = 1mA

Base-Emitter Saturation Voltage (Note 8)

VBE(sat)

—

800

IC = 10mA, IB = 1mA

Current in Second Breakdown (Pulsed)

IUSB

—

VC = 200V, CCE = 620pF

VC = 250V, CCE = 620pF

Collector-Emitter Inductance

Lce

—

2.5

—

Standard SOT23 leads

Output Capacitance

Ccbo

—

VCB = 20V, IE = 0

f = 100MHz

Transition Frequency

—

MHz

VCE = 20V, IC = 10mA,

f = 20MHz

Note:

8. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

 15mm FR-4 1oz Copper

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