SI7862DP datasheet(2/5 Pages) VISHAY

2 / 5 page

Si7862DP

Vishay Siliconix

www.vishay.com

Document Number: 71792

S-31727—Rev. B. 18-Aug-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 12.8 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 12.8 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 4.5 V

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 29 A

0.0027

0.0033

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 23 A

0.0045

0.0055

Forward Transconductancea

gfs

VDS = 6 V, ID = 29 A

140

Diode Forward Voltagea

VSD

IS = 4.5 A, VGS = 0 V

0.75

1.2

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 6 V, VGS = 4.5 V, ID = 29 A

11.8

Gate-Drain Charge

Qgd

8.9

Gate Resistance

0.5

1.3

2.1

Turn-On Delay Time

td(on)

Rise Time

VDD = 6 V, RL = 6 W

Turn-Off Delay Time

td(off)

VDD = 6 V, RL = 6 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

120

180

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

120

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

012345

VGS = 5 thru 2.5 V

TC = 125_C

-55

2 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

SI7862DP Datasheet(PDF) 2 Page - Vishay Siliconix

SI7862DP Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

Datasheet Download

Link URL