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MMSD4148 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MMSD4148
Description  Switching Diode
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMSD4148 Datasheet(HTML) 2 Page - ON Semiconductor

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MMSD4148, SMMSD4148
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IBR = 100 mA)
V(BR)
100
−
V
Reverse Voltage Leakage Current
(VR = 20 V)
(VR = 75 V)
IR
−
−
25
5.0
nA
mA
Forward Voltage
(IF = 10 mA)
VF
−
1000
mV
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
−
4.0
pF
Reverse Recovery Time
(IF = IR = 10 mA) (Figure 1)
trr
−
4.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp » trr
+10 V
2 k
820 W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit



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