©

Semiconductor Components Industries, LLC, 1994

April, 2018 − Rev. 9

1

Publication Order Number:

MMBTA55LT1/D

MMBTA55LSeries,

MMBTA56LSeries,

SMMBTA56LSeries

Driver Transistors

PNP Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

MMBTA55

MMBTA56, SMMBTA56

−60

−80

Vdc

Collector − Base Voltage

MMBTA55

MMBTA56, SMMBTA56

−60

−80

Vdc

Emitter − Base Voltage

−4.0

Vdc

Collector Current − Continuous

−500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25°C

225

1.8

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

556

°

C/W

Total Device Dissipation Alumina

Derate above 25°C

300

2.4

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

417

°

C/W

Junction and Storage Temperature

−55 to +150

°

C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

SOT−23

CASE 318

STYLE 6

COLLECTOR

3

1

BASE

2

EMITTER

www.onsemi.com

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

2xx M G

G

2xx = Device Code

x = H for MMBTA55LT1G

xx = GM for MMBTA56LT1G,

SMMBTA56LT1G

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION