SE3455/5455

GaAs Infrared Emitting Diode

ELECTRICAL CHARACTERISTICS (25

°C unless otherwise noted)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Total Power Output

mW

SE3455-001, SE5455-001

2.0

SE3455-002, SE5455-002

3.5

SE3455-003, SE5455-003

4.8

SE3455-004, SE5455-004

5.4

Forward Voltage

1.7

V

Reverse Breakdown Voltage

3.0

V

µA

Peak Output Wavelength

935

nm

Spectral Bandwidth

∆λ

50

nm

Spectral Shift With Temperature

0.3

nm/

°C

Ø

degr.

SE3455

90

SE5455

20

Radiation Rise And Fall Time

0.7

µs

Notes

1. Beam angle is defined as the total included angle between the half intensity points.

ABSOLUTE MAXIMUM RATINGS

(25

°C Free-Air Temperature unless otherwise noted)

Continuous Forward Current

100 mA

Peak Forward Current

3 A

(1

µs pulse width, 300 pps)

Power Dissipation

150 mW

(1)

Operating Temperature Range

-55

°C to 125°C

Storage Temperature Range

-65

°C to 150°C

Soldering Temperature (10 sec)

260

°C

Notes

1. Derate linearly from 25

°C free-air temperature at the

rate of 1.43 mW/

°C.

SCHEMATIC

Cathode

Anode

27

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.