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IRF3103 Datasheet(PDF) 2 Page - InterFET Corporation |
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IRF3103 Datasheet(HTML) 2 Page - InterFET Corporation |
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2 / 8 page  IRL3103 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.014 VGS = 10V, ID = 34A ––– ––– 0.019 VGS = 4.5V, ID = 28A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 23 ––– ––– S VDS = 25V, ID = 34A ––– ––– 25 VDS = 30V, VGS = 0V ––– ––– 250 VDS = 18V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 50 ID = 34A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 28 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 15V tr Rise Time ––– 210 ––– ID = 34A td(off) Turn-Off Delay Time ––– 20 ––– RG = 3.4Ω, VGS =4.5V tf Fall Time ––– 54 ––– RD = 0.43Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1600 ––– VGS = 0V Coss Output Capacitance ––– 640 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nA S D G IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance IGSS LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ns µA nH Ω Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 34A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: V DD = 15V, starting TJ = 25°C, L = 300µH RG = 25Ω, IAS = 34A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V trr Reverse Recovery Time ––– 81 120 ns TJ = 25°C, IF = 34A Qrr Reverse RecoveryCharge ––– 210 310 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A ––– ––– 220 ––– ––– 64 S D G |
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