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LH0003 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LH0003 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 4 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage g 20V Power Dissipation See curve Differential Input Voltage g 7V Input Voltage Equal to supply Load Current 120 mA Operating Temperature Range LH0003 b 55 Cto a125 C LH0003C 0 Cto a85 C Storage Temperature Range b 65 Cto a150 C Lead Temperature (Soldering 10 sec) 300 C Electrical Characteristics (Notes12) Parameter Conditions Min Typ Max Units Input Offset Voltage RS k 100X 04 30 mV Input Offset Current 002 02 m A Input Bias Current 04 20 m A Supply Current VS e g20V 12 3 mA Voltage Gain RL e 100k VS e g15V VOUT e g10V 20 70 VmV Voltage Gain RL e 2k VS e g15V VOUT e g10V 15 40 VmV Output Voltage Swing VS e g15 RL e 100X g 10 g 12 V Input Resistance 100 kX Average Temperature RS k 100X 4 m V C Coefficient of Offset Voltage Average Temperature 8 nA C Coefficient of Bias Current CMRR RS k 100X VS e g15V VIN e g10V 70 90 dB PSRR RS k 100X VS e g15V DV e 5V to 20V 70 90 dB Equivalent Input RS e 100X f e 10 kHz to 100 kHz 18 m Vrms Noise Voltage VS e g15V Note 1 These specifications apply for Pin 7 grounded for g5V k VS k g20V with capacitor C1 e 90 pF from pin 1 to pin 10 and C2 e 90 pF from pin 5 to ground over the specified operating temperature range unless otherwise specified Note 2 Typical values are for tAMBIENT e 25 C unless otherwise specified Note 3 See RETS0003X for the LM0003H military specifications Typical Performance Characteristics Maximum Power Dissipation Response Large Signal Frequency Response Open Loop Frequency TLK10123 – 5 2 |
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