TSL250, TSL251, TSL252

LIGHT-TO-VOLTAGE OPTICAL SENSORS

SOES004C – AUGUST 1991 – REVISED NOVEMBER 1995

2

POST OFFICE BOX 655303

(see Note 3)

PARAMETER

TEST

TSL250

TSL251

TSL252

UNIT

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

VD

Dark voltage

Ee = 0

3

10

3

10

3

10

mV

VOM

Maximum output

voltage swing

Ee = 2 mW/cm2

3.1

3.5

3.1

3.5

3.1

3.5

V

Ee = 25 µW/cm2

1

2

3

VO

Output voltage

Ee = 45 µW/cm2

1

2

3

V

Ee = 285 µW/cm2

1

2

3

Temperature

Ee = 25 µW/cm2,

TA = 0°C to 70°C

±1

αvo

Tem erature

coefficient of

output voltage

Ee = 45 µW/cm2,

TA = 0°C to 70°C

±1

mV/

°C

(VO)

Ee = 285 µW/cm2,

TA = 0°C to 70°C

±1

Ne

Irradiance

responsivity

See Note 4

80

45

7

mV/(

µW/cm2)

Ee = 25 µW/cm2

900

1600

IDD

Supply current

Ee = 45 µW/cm2

900

1600

µA

Ee = 285 µW/cm2

900

1600

NOTES:

3. The input irradiance Ee is supplied by a GaAlAs infrared-emitting diode with λp = 880 nm.

4. Irradiance responsivity is characterized over the range VO = 0.05 to 3 V.

PARAMETER

TEST CONDITIONS

TSL250

TSL251

TSL252

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

tr

Output pulse rise time

VDD = 5 V,

λp = 880 nm

360

90

7

µs

tf

Output pulse fall time

VDD = 5 V,

λp = 880 nm

360

90

7

µs

Vn Output noise voltage

VDD = 5 V,

f = 20 Hz

0.6

0.5

0.4

µV/√Hz

PARAMETER MEASUREMENT INFORMATION

VOLTAGE WAVEFORM

TEST CIRCUIT

Input

Ee

10%

90%

Output

(see Note B)

tr

TSL25x

RL

VDD

2

1

3

+

–

Output

Pulse

Generator

IRED

(see Note A)

tf

90%

10%

NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics:

λp = 880 nm,

tr < 1 µs, tf < 1 µs.

B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MHz, Ci ≤ 20 pF.

Figure 1. Switching Times