STPSC10065DLF datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STPSC10065DLF

Description	650 V, 10 A power Schottky silicon carbide diode

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

VF(V)

IF(A)

Ta=150 °C

Ta=175 °C

Pulse test : tp=500µs

Ta=25 °C

Ta=100 °C

Figure 2. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100 150 200 250 300 350 400 450 500 550 600 650

VR(V)

IR(µA)

Tj=25 °C

Tj=150 °C

Tj=175 °C

Figure 3. Peak forward current versus case temperature

(fw > 10 kHz)

100

125

150

175

IM(A)

TC(°C)

δ=0.1

δ=0.3

δ=0.5

δ=1

δ=0.7

δ=tp/T

Figure 4. Junction capacitance versus reverse voltage

applied (typical values)

100

200

300

400

500

600

700

0.1

1.0

10.0

100.0

1000.0

VR(V)

Cj(pF)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

STPSC10065DLF

Characteristics (curves)

DS13136 - Rev 2

page 4/12

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