STPSC20065D datasheet(2/13 Pages) STMICROELECTRONICS

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Characteristics

STPSC20065

2/13

DocID029246 Rev 2

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS)

Forward rms current

IF(AV)

Average forward

current

TO-220AC, DO-247

TC = 140 °C, DC current

TO-220AC Ins

TC = 85 °C, DC current

IFRM

Repetitive peak

forward current

TO-220AC, DO-247

TC = 140 °C, Tj = 175 °C,

δ = 0.1

TO-220AC Ins

TC = 85 °C, Tj = 175 °C,

δ = 0.1

IFSM

Surge non

repetitive

forward current

tp = 10 ms sinusoidal

TC = 25 °C

tp = 10 ms sinusoidal

TC = 125 °C

tp = 10 µs square

TC = 25 °C

400

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature range(1)

-40 to +175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Package

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

TO-220AC

DO-247

0.60

0.90

°C/W

TO-220AC Ins

1.60

2.50

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

300

µA

Tj = 150 °C

280

2000

Tj = 25 °C

VR = 600 V

150

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

1.30

1.45

Tj = 150 °C

1.45

1.65

Tj = 175 °C

1.5

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 500 µs, δ < 2%

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